FUJII Masahiro | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
スポンサーリンク
概要
関連著者
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Fujii M
Samsung Yokohama Res. Inst. Co. Ltd. Yokohama‐shi Jpn
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Fujii M
Tokyo University Of Science:(present Office)utsunomiya University
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Fujii M
Yamanouchi Pharmaceutical Co. Ltd. Ibaraki Jpn
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YOSHIDA Nobuhide
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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FUJII Masahiro
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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MAEDA Tadashi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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YOSHIDA Nobuhide
NEC Corporation
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Fujii M
Nec Corp. Tsukuba‐shi Jpn
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TOKUSHIMA Masatoshi
NEC Corporation, Fundamental and Environmental Research Laboratories
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WADA Shigeki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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TOKUSHIMA Masatoshi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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ISHIKAWA Masaoki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Wada Shigeki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Numata Keiichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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TSUTSUI Hiroaki
ULSI Device Development Laboratories, NEC Corporation
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Ishikawa M
Ntt Corp. Atsugi‐shi Jpn
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ASAI Shuji
NEC Corporation
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ATSUMO Takao
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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ASAI Shuji
ULSI Device Development Laboratories, NEC Corporation
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KOHNO Michihisa
ULSI Device Development Laboratories, NEC Corporation
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OIKAWA Hirokazu
ULSI Device Development Laboratories, NEC Corporation
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Atsumo Takao
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kohno M
Ulsi Device Development Laboratories Nec Corporation
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Tsutsui Hiroaki
Ulsi Device Development Laboratories Nec Corporation
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Tokushima M
Nec Corporation Fundamental And Environmental Research Laboratories
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Oikawa Hirokazu
Ulsi Device Development Laboratories Nec Corporation
著作論文
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)