YOSHIDA Nobuhide | NEC Corporation
スポンサーリンク
概要
関連著者
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YOSHIDA Nobuhide
NEC Corporation
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Fujii M
Samsung Yokohama Res. Inst. Co. Ltd. Yokohama‐shi Jpn
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Fujii M
Tokyo University Of Science:(present Office)utsunomiya University
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Fujii M
Yamanouchi Pharmaceutical Co. Ltd. Ibaraki Jpn
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Matsumoto Satoru
Department Of Electronics And Electrical Engineering Keio University
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YOSHIDA Nobuhide
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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FUJII Masahiro
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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MAEDA Tadashi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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MAEDA Takayoshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HIGUCHI Hirofumi
Bentec Corporation
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Matsumoto S
Ntt Telecommunications Energy Laboratories
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Maeda T
Tsukuba Research Laboratory Sumitomochemical Co. Ltd.
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Yoshida N
Keio Univ. Yokohama
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Chichibu S
Institute Of Applied Physics University Of Tsukuba
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Chichibu S
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Higuchi H
Matsushita Battery Industrial Co. Ltd. Osaka Jpn
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ASAI Shuji
NEC Corporation
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Fujii M
Nec Corp. Tsukuba‐shi Jpn
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TOKUSHIMA Masatoshi
NEC Corporation, Fundamental and Environmental Research Laboratories
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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Matsumoto S
Faculty Of Science And Technology Keio University
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MATSUMOTO Satoru
Faculty of Science and Technology, Keio University
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WADA Shigeki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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TOKUSHIMA Masatoshi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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ISHIKAWA Masaoki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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CHICHIBU Shigefusa
Faculty of Science and Technology, Science University of Tokyo
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UCHIDA Mei
Faculty of Science and Technology, Keio University
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HARADA Yoshiyuki
Faculty of Science and Technology, Keio University
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SUDO Ryo
Faculty of Science and Technology, Keio University
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Enomoto Tadayoshi
Chuo University
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Sudo Ryo
Faculty Of Science And Technology Keio University
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Harada Y
Life Culture Department Seitoku University
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Wada Shigeki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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YOSHIDA Nobuhide
Faculty of Science and Technology, Keio University
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Numata Keiichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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TSUTSUI Hiroaki
ULSI Device Development Laboratories, NEC Corporation
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CHICHIBU Shigefusa
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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YOSHIDA Nobuhide
Department of Electrical Engineering, Faculty of Science and Technology, Keio University
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Chichibu Shigefusa
Department Of Electrical Engineering Keio University
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Enomoto Tadayoshi
Chuo Univ. Tokyo Jpn
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Ishikawa M
Ntt Corp. Atsugi‐shi Jpn
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HIROBE Atsunori
Chuo University
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FUJII Masahiro
NEC Corporation
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ATSUMO Takao
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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ASAI Shuji
ULSI Device Development Laboratories, NEC Corporation
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KOHNO Michihisa
ULSI Device Development Laboratories, NEC Corporation
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OIKAWA Hirokazu
ULSI Device Development Laboratories, NEC Corporation
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Uchida M
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Atsumo Takao
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Yoshida Nobuhide
Department Of Electrical Engineering Faculty Of Science And Technology Keio University:(present Addr
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Kohno M
Ulsi Device Development Laboratories Nec Corporation
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Tsutsui Hiroaki
Ulsi Device Development Laboratories Nec Corporation
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Tokushima M
Nec Corporation Fundamental And Environmental Research Laboratories
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Matsumoto Satoru
Faculty Of Science And Technology Keio University
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Oikawa Hirokazu
Ulsi Device Development Laboratories Nec Corporation
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Enomoto Tadayoshi
Chuo Univ.
著作論文
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe_2/CuAlSe_2 Heterostructure
- Chemical Vapor Deposition of Cu Film on SiO_2 Using Cyclopentadienylcoppertriethylphosphine
- Low-Voltage, Low-Power, High-Speed 0.25-μm GaAs HEMT Delay Flip-Flops
- ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)