Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets

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概要

• 論文の詳細を見る

• We propose here an advanced facet-controlled epitaxial lateral overgrowth (FACELO) technique for obtaining a GaN layer with a low threading dislocation (TD) density. In the selective-area-growth (SAG) GaN with (11–22) facets, TDs from the underlying GaN are bent horizontally, i.e., toward the $\langle$11–20$\rangle$ or $\langle$1–100$\rangle$ direction. In the advanced FACELO technique, TDs are terminated by SiO2 masks on (11–22) facets. Except for coalescence regions, the TD density of the surface was less than $10^{6}$ cm-2 for the GaN layer grown by MOVPE using the advanced FACELO technique. The side masks have an additional benefit of contributing to the void formation which facilitates the separation of the thick GaN films from the sapphire substrate.

• Japan Society of Applied Physicsの論文
• 2005-01-10

著者

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• MAEDA Takayoshi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Maeda T

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Bohyama Shinya

  Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Ja

• Tsuchida Yoshihiko

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba 300-3294, Japan

• Tsuchida Yoshihiko

  Sumitomo Chemical Co. Ltd. Ibaraki Jpn

• Bohyama Shinya

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• TSUCHIDA Yoshihiko

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

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