Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
スポンサーリンク
概要
- 論文の詳細を見る
Growth of thick InGaN films was performed on single crystal films of GaN or AlGaN and buffer layers of AlN, GaN or AlGaN by metalorganic vapor phase epitaxy (MOVPE). In the growth of InGaN on GaN or AlGaN films, smooth InGaN films with small indium mole fractions were grown in the initial growth stage caused by strong stress due to lattice mismatch. However, with an increase in thickness of the InGaN film surface became rough due to the generation of InGaN grains with large indium mole fractions. Smooth and thick (∼2 µ m) InGaN films with large indium mole fractions were grown on AlN, GaN or AlGaN buffer layers.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-15
著者
-
Shimizu Masaya
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Setsunan University
-
KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
-
Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
-
Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Shimizu Masaya
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
-
Hiramatsu Kazumasa
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
-
Kawaguchi Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
-
Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
関連論文
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
- Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
- On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Theory of Tunneling into Impurity Band
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Field Emission from GaN Self-Organized Nanotips
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
- Inhibitory Activities of Peptide-Conformers Originating from Matrix Metalloproteinase-7 against MMPs
- UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
- Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
- Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
- Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
- Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
- Theory of Plasma Spreading Velocity in a Thyristor
- Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
- Tunneling through Band Tail States
- Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
- Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
- Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
- Electron Mobility and Drag Effect in p-Type Silicon
- Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
- Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
- Magnetic Scattering in Germanium Tunnel Diode
- Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
- Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy
- A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
- Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
- Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Confinement and Transfer of a Two-Dimensional Wave Packet under Crossed Electric and Magnetic Fields
- Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
- Enhancement of Electron Mobility in Quasi-One-Dimensional Structure