Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
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概要
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A new time-of-flight (ToF) method is proposed for the study of transport properties in low-dimensional systems. By analyzing the photoluminescence intensity correlation curves under external fields, the drift velocity of excess carriers in quasi-1-dimensional (1D) quantum wells is determined. The drift velocity in a p-type doped GaAs/AlGaAs quasi-1D structure is determined in various electric fields, and the electron mobility is estimated as 4800 cm^2/V・s at 300 K, which is in agreement with that in a conventional two-dimensional electron gas (2DEG) structure.
- 社団法人応用物理学会の論文
- 1992-02-15
著者
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Okuno Eiichi
Department Of Electronics School Of Engineering Nagoya University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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HORI Tetuya
Department of Electronics, School of Engineering, Nagoya University
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HOPFEL Ralph
Institut fur Experimentalphysik, Universitat Innsbruck, Technikerstrasse
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Hori Tetuya
Department Of Electronics School Of Engineering Nagoya University
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Hopfel Ralph
Institut Fur Experimentalphysik Universitat Innsbruck Technikerstrasse
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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