Lattice-Mismatch-Induced Deep Level in In_xGa_<1-x>AS_yP_<1-y> (0≦y≦0.41) Grown on (100) GaAs

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概要

• 論文の詳細を見る

• The effect of lattice mismatch between a quaternary alloy layer In_xGa_<1-x>As_yP_<1-y> (0≦y≦0.41) and a (100) GaAs substrate is investigated by the deep level transient spectroscopy (DLTS) technique. It is found that a new electron trap level with an activation energy of E_c-0.61 eV and a large electron capture cross section of 〜 10^<-13> cm^2 appears when the epilayer InGaAsP is lattice-mismatched to the GaAs substrate at the growth temperature. The concentration of the new trap level increases with the increase of the lattice mismatch, and the concentration becomes larger close to the heterointerface of InGaAsP / GaAs. It is suggested that this level is related to an anion vacancy and / or a complex involving an impurity which is incorporated into the heterointerface at the initial stage of growth. The capture cross section of the new level might be of an Auger type.

• 社団法人応用物理学会の論文
• 1989-08-20

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Zhu Qinsheng

  Department Of Electronics School Of Engineering Nagoya University

• ZHU Qin-Sheng

  Department of Electronics, School of Engineering, Nagoya University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

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