Theory of Plasma Spreading Velocity in a Thyristor
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概要
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The lateral spreading velocity of ON-region in a thyristor is investigated by using excesscarrier distribution functions for OFF-regions in n- and p-base layers. We take into account of the effect of carrier injection across the emitter junction as well as the lateral diffusion of excesscarriers from the ON-region, and we show that the former dominates in operations at a low current level while the latter dominates at a high current level.Theoretically an increase of p-base width reduces the spreading velocity but that of n-base width has only secondary effect via the latching current. The spreading velocity increases at alow current level as the temperature is raised, but it is essentially independent of the temperature at the high current limit.
- 社団法人応用物理学会の論文
- 1975-12-05
著者
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Sato Noriaki
Department Of Physics Graduate School Of Science Nagoya University
-
Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
-
Sato Noriaki
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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