Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

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概要

• 論文の詳細を見る
• 2007-08-01

著者

• Honda Y

  Department Of Electronics Nagoya University

• Honda Y

  Tokyo Inst. Technol. Tokyo Jpn

• Tanaka S

  Nagoya Univ. Nagoya Jpn

• Honda Yoshio

  Department Of Electronics Nagoya University

• Honda Y

  Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.

• Tanaka Shin-ichiro

  Department Of Physics Graduate School Of Science Nagoya University

• Tanaka S

  Department Of Electronics Nagoya University

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• TANAKA Shigeyasu

  EcoTopia Science Institute, Nagoya University

• AOYAMA Kentaro

  Department of Electronics, Nagoya University

• ICHIHASHI Mikio

  EcoTopia Science Institute, Nagoya University

• ARAI Shigeo

  EcoTopia Science Institute, Nagoya University

• Ichihashi Mikio

  Ecotopia Science Institute Nagoya University

• Arai Shigeo

  Ecotopia Science Institute Nagoya University

• Aoyama Kentaro

  Department Of Electronics Nagoya University

• HONDA Yoshio

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• SAWAKI Nobuhiko

  Department of Electronics, Nagoya University

• Honda Yoshio

  Department of Chemistry, Faculty of Science, Kanazawa University

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