Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
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概要
- 論文の詳細を見る
We have studied the asymmetric broadening of the Raman spectra of In_xGa_<1-x>As_yP_<1-y> grown on InP in the immiscible region using the spatial correlation model. The compositional dependence of Raman peaks are well explained by a simple model which does not account for the immiscibility. However, the broadening of the Raman line shape is greatly enhanced in the samples in the region of the immiscibility. In particular, the asymmetry of the spectral peak of the InAs-like longitudinal optical phonon is found to be enhanced in the immiscible region. This shows that the samples which include the immiscibility have been structurally changed to suppress the uniform distribution of the long wavelength phonons.
- 社団法人応用物理学会の論文
- 1998-02-15
著者
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Sawaki N
Nagoya Univ. Nagoya Jpn
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SUGIURA Touko
Department of Electrical Engineering, Toyota College of Technology
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HASE Nobuyasu
Department of Electrical Engineering, Toyota College of Technology
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Iguchi Yasuhiro
Optoelectronic Industry And Technology Development Association (oitda)
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Sugiura T
Department Of Electrical Engineering Toyota College Of Technology
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Hase N
Department Of Electrical Engineering Toyota College Of Technology
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Iguchi Y
Sumitomo Electric Ind. Ltd. Osaka Jpn
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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