Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
スポンサーリンク
概要
- 論文の詳細を見る
Analyzing I-V characteristics of the direct current component of a revesely biased germanium tunnel diode, the density of states and the electronic self-energy in the impurity band associated with (000) subsidiary valley were investigated. The d^2I/dV^2-V curves for As doped samples (Nd=5×10^<18> and 1.5×10^<19>cm^<-3>) showed that the density of states has a dip between the impurity band and the main band. In the case of Sb doped sample (N_d=5×10^<18> and 1.3×10^<19>cm^<-3>), there was little evidence for the dip, but there existed only a long tail going down continuously below the main band. The imaginary part of the self-energy in the impurity band was found to decay exponentially into the forbidden band in both materials. The results were in good agreement with the measurements of the localized spin through the zero bias conductance anomaly.
- 社団法人日本物理学会の論文
- 1974-01-15
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Electronics Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Sawaki Nobuhiro
Department of Electronics, Faculty of Engineering, Nagoya University
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YOSHIDA Akira
Department of Electronics, Faculty of Engineering, Nagoya University
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