Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Thick AlN crystals were grown by conventional hydride vapor phase epitaxy (HVPE) on AlN/sapphire templates under low pressure (${\sim}15$ Torr) at high temperature (1100°C–1200°C). Colorless, mirror-like AlN films were obtained at the growth rates of up to 20.6 μm/h. The best root mean square (RMS) value of atomic force microscope (AFM) observations for the AlN surface was 2.34 nm. The typical values of full width half maximum (FWHM) of X-ray rocking curves for (0002) and ($10\bar{1}2$) diffraction of AlN films were 173–314 arcsec and 1574–1905 arcsec, respectively. We also investigated the influences of carrier gas, growth temperature and growth rate on the crystal quality.
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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Liu Yu-huai
Department Of Electrical And Electronic Engineering Mie University
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Shibata Tomohiko
Ngk Insulators Ltd.
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Shibata Tomohiko
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya, Aichi 467-8507, Japan
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Miyake Hideto
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
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Tanabe Tomoaki
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
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Tanaka Mutsuhiro
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya, Aichi 467-8507, Japan
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Masa Yoshihiko
Sumitomo Metal Mining Co. Ltd., 6-1 Suehiro-cho 1-chome, Ome, Tokyo 198-8601, Japan
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Liu Yu-Huai
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu 514-8507, Japan
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