Kubo Toshiharu | Research Center For Integrated Quantum Electronics Hokkaido University
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概要
関連著者
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Kubo Toshiharu
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
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Freedsman Joseph
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
著作論文
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors