Freedsman Joseph | Research Center For Nano-device And System Nagoya Institute Of Technology
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概要
- Freedsman Joseph J.の詳細を見る
- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者
関連著者
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Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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FREEDSMAN Joseph
Research center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe ARATA
Research center for Nano-Device and System, Nagoya Institute of Technology
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SELVARAJ Lawrence
Research center for Nano-Device and System, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe Arata
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj Lawrence
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
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Freedsman Joseph
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
著作論文
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors