Selvaraj S. | Research Center For Nano-device And System Nagoya Institute Of Technology
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概要
- SELVARAJ S. Lawrenceの詳細を見る
- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者
関連著者
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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SELVARAJ S.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Suzue Takaaki
Research Center For Nano-device And System Nagoya Institute Of Technology
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Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
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SUZUE Takaaki
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
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Tan Shuxin
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Suzue Takaaki
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Selvaraj Josephine
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Freedsman Joseph
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
著作論文
- Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
- Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
- Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors
- Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
- Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si