Tan Shuxin | Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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概要

関連著者

Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
Suzue Takaaki
Research Center For Nano-device And System Nagoya Institute Of Technology
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
Tan Shuxin
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Suzue Takaaki
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

著作論文

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

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