Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

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概要

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• Influence of thickness and growth condition of AlN spacer on electrical properties of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) grown on 4-in. Si substrate was studied. Hall measurements show the mobility of AlGaN/AlN/GaN heterostructure varies with different thickness of AlN spacer and a narrow high-mobility window was obtained. The surface and structure studies indicate that both increasing growth temperature and lowering pressure benefit the quality of AlN and AlGaN, which leads to improvement of Hall mobility, except the temperature higher than that of GaN growth. Drain current–voltage ($I_{\text{ds}}$–$V_{\text{ds}}$) characteristics of such HEMTs exhibit the maximum current density ($I_{\text{max}}$) and tranconductance ($g_{\text{max}}$) have the similar trend with the mobility due to different interface roughness and piezoelectric field induced by part relaxation of tensile strain in AlGaN grown on AlN. The optimum properties of HEMT ($I_{\text{max}} = 807$ mA/mm, $g_{\text{max}} = 221$ mS/mm) are obtained when 1 nm AlN spacer grown at 1130 °C and 100 Torr.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-11-25

著者

• Selvaraj S.

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Suzue Takaaki

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Tan Shuxin

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Suzue Takaaki

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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