Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate

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概要

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• Undoped quaternary AlxIn0.02Ga0.98-xN/GaN heterostructure field effect transistors (HFET) with different Al mole fractions were fabricated on sapphire substrate. An enhancement in two-dimensional electron gas density with increasing the Al mole fractions was observed. The properties of HFETs revealed that, with the Al incorporation, both maximum transconductance ($g_{\text{mmax}}$) and drain current ($I_{\text{dmax}}$) increased up to 138 mS/mm and 1230 mA/mm, respectively, for the device with 2 μm gate length. In addition, the threshold voltage strongly depended on Al mole fraction, by which normally-off HFET was demonstrated on a low Al-contained sample. No breakdown was observed for all the AlxIn0.02Ga0.98-xN/GaN HFETs when the gate–drain reverse bias was applied up to 100 V. The results indicate that quaternary AlInGaN is a promising candidate for high power and high frequency device applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Jiang Hao

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Zhang Baijun

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Liu Yang

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Zhang Baijun

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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