Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire

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概要

• 論文の詳細を見る

• The AlGaN/GaN heterostructures (HSs) with reduced dislocation density were grown on 4-in. a-plane sapphire substrate. The two-dimensional electron gas (2DEG) was observed for AlGaN/GaN HSs on a-plane sapphire. A complete pinch off AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with a maximum drain current density ($I_{\text{DSmax}}$) of 551 mA/mm and transconductance maximum ($g_{\text{mmax}}$) of 134 mS/mm. Compared to c-plane grown HEMTs, two orders of magnitude low gate leakage current was observed on a-plane grown HEMTs with enhanced barrier height. The low gate leakage is due to enhanced Schottky barrier height and reduced dislocation density of GaN grown on a-plane sapphire.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-05-25

著者

• Selvaraj Susai

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Selvaraj Susai

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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