Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
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概要
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A novel vertical GaN-based light-emitting diode (LED) structure on a Si(111) substrate with through-holes was reported in this letter. The through-holes were formed by dry etching from the n-GaN layer to the Si substrate. Metals connecting the n-GaN layer and Si substrate were used to fill the holes. The series resistances induced by the AlN buffer layer and other interlayers were shorted by the metals filling the holes. Compared with those of the conventional LED structure, the series resistance and operating voltage at 20 mA were reduced from 26 to 22.5 $\Omega$, and from 4.4 to 4.0 V, respectively. Light output intensity shows an increase of 29%.
- 2010-07-25
著者
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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Liu Yang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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Chen Tufu
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Zhang Baijun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Fan Bingfeng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wei Jingting
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Rao Wentao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Huang Zhicong
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Yang Weimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Rao Wentao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Yang Weimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wei Jingting
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Huang Zhicong
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Chen Tufu
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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