Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
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概要
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An indium-surfactant-assisted delta doping method is reported to enhance the hole concentration and doping efficiency of Mg-doped p-type GaN grown by metal organic chemical vapor deposition. The hole concentration is increased to 1.5\times 10^{18} cm<sup>-3</sup>by using this method, which is 92% higher than that of conventional delta doping. This higher carrier concentration leads to an improved doping efficiency of 12%. Secondary ion mass spectroscopy reveals that the Mg incorporation is increased by the In surfactant. Photoluminescence analysis suggests that the nitrogen vacancies may be suppressed by the induced indium. Temperature-dependent Hall measurements indicate that the Mg ionization energy and compensation ratio are reduced by the In surfactant.
- 2013-04-25
著者
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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Jiang Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Zheng Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Chen Yingda
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Wu Hualong
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Yue Guanglong
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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