Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
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概要
- 論文の詳細を見る
- 2013-04-25
著者
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Zheng Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Chen Yingda
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Wu Hualong
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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CHEN Zimin
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University
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YUE Guanglong
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University
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ZHENG Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-sen University
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JIANG Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
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- Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes
- High Quality GaN Grown on Si(111) Using Fast Coalescence Growth
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
- Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method