High Quality GaN Grown on Si(111) Using Fast Coalescence Growth
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概要
- 論文の詳細を見る
In the paper, a fast coalescence growth is introduced to the epitaxial growth of GaN on silicon substrate. With the fast coalescence growth method, a thin low pressure GaN (LP-GaN) layer used as a function layer, the GaN film could coalesce quickly within a thin thickness, additionally, a smooth surface and high crystal quality could be achieved. With further investigation, it was found that the general GaN coalescence thickness was mainly influenced by the thickness and the growth pressure of the LP-GaN interlayer. And the LP-GaN interlayer has a critical thickness, if over the critical thickness, the crystal quality would degrade. At the same time, it is found that the GaN quality was not affected by the coalescence thickness with a thin LP-GaN interlayer under critical thickness.
- 2011-12-25
著者
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Zhao Yu
School Of Pharmacy Wenzhou Medical College
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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Liu Yang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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Luo Ruihong
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Xiang Peng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Liu Minggang
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Chen Tufu
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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He Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Fan Bingfeng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Xian Yulun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Jiang Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Zhang Baijun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Jiang Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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He Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Xian Yulun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Xian Yulun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Zhang Baijun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Fan Bingfeng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Fan Bingfeng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Xiang Peng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Zhao Yu
School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
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Chen Tufu
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Liu Yang
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Liu Minggang
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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JIANG Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
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