Distribution patterns of shrubby N-fixers and non-N fixers in an arid valley in Southwest China : implications for ecological restoration
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概要
- 論文の詳細を見る
- 2010-05-01
著者
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LIU Yang
State Key Laboratory of Natural and Biomimetic Drugs and School of Pharmaceutical Sciences, Peking U
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Fu Bo
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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SONG Cheng
State Key Laboratory of Urban and Regional Ecology, Research Center for Eco-Environmental Sciences,
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MA Ke
State Key Laboratory of Urban and Regional Ecology, Research Center for Eco-Environmental Sciences,
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QU Lai
State Key Laboratory of Urban and Regional Ecology, Research Center for Eco-Environmental Sciences,
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XU Xian
State Key Laboratory of Urban and Regional Ecology, Research Center for Eco-Environmental Sciences,
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ZHONG Jian
Beijing Forestry University
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Xu Xian
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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Song Cheng
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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Ma Ke
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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Qu Lai
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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Liu Yang
State Key Laboratory Of Urban And Regional Ecology Research Center For Eco-environmental Sciences Ch
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Liu Yang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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- Distribution patterns of shrubby N-fixers and non-N fixers in an arid valley in Southwest China : implications for ecological restoration
- Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
- EDTA-controlled One-pot Preparation of Novel Shaped Gold Microcrystals and Their Application in Surface-enhanced Raman Scattering
- Influence of V/III ratio of low temperature grown AlN interlayer on the growth of GaN on Si substrate
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- Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes
- High Quality GaN Grown on Si(111) Using Fast Coalescence Growth
- Phase evolution and ferroelectric behavior in BaTiO_3-BiScO_3-PbTiO_3 ceramics
- Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer