Effect of Wasted Space on Device Characteristics of Nitride-Based Avalanche Photodiodes
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概要
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On the basis of our recently proposed theory [Jpn. J. Appl. Phys. <b>49</b> (2010) 114101], we report the effect of wasted space on the multiplication gain and excess noise characteristics of GaN-based avalanche photodiodes. By means of the Monte Carlo method, it is shown that with the adoption of the revised impact ionization coefficients, the multiplication gain exhibits an obvious discrepancy compared with conventional theory, and agrees well with that reported for InP. Moreover, the size-dependent impact ionization coefficients affect the noise properties under submicron scale, leading to a new feature different from InP and clarifying the reported experimental data.
- 2011-07-25
著者
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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Zheng Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Xu Kunyuan
School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, People's Republic of China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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Xu Kunyuan
School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, People's Republic of China
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