Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes
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概要
- 論文の詳細を見る
In this study, we systematically investigate the effect of InGaN insertion layer (IL) on nitride-based light-emitting diodes. First, a series of samples with different InGaN ILs (Si doping level, thickness) were fabricated and investigated. An optimized condition of the IL was obtained based on current--voltage and electroluminescence measurements. Furthermore, in order to investigate the dominant mechanism for the improved performance of the samples with IL, the optimized sample and a control sample without InGaN IL were compared by means of X-ray diffraction, atomic force microscopy, photoluminescence, injection-current-dependent electroluminescence measurements and infrared camera images. Based on the discussion of these measurement results, we conclude that the performance improvements of samples with InGaN IL are due to both the effects of strain relaxation and better current spreading.
- 2012-07-25
著者
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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Jiang Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Xian Yulun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Fan Bingfeng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Zheng Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Huang Shanjin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Jia Weiqing
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wang Gang
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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JIANG Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
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