Wu Zhisheng | State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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概要
- Wu Zhishengの詳細を見る
- 同名の論文著者
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, Chinaの論文著者
関連著者
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Wu Zhisheng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Jiang Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Zheng Zhiyuan
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Wang Gang
State Key Laboratory of Natural Medicines, Department of Natural Medicinal Chemistry, China Pharmaceutical University
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Liu Yang
State Key Laboratory Of Advanced Technology For Materials Synthesis And Processing Wuhan University
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Zhang Baijun
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Chen Zimin
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Xiang Peng
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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Liu Minggang
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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JIANG Hao
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
著作論文
- Influence of V/III ratio of low temperature grown AlN interlayer on the growth of GaN on Si substrate
- Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes
- Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes
- High Quality GaN Grown on Si(111) Using Fast Coalescence Growth
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
- Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method
- Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method