Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition

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概要

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• The authors report the effect of growth temperature on the structural quality of an InAlN layer lattice matched to GaN. InAlN/GaN structures were grown on a sapphire substrate using a low-temperature-grown GaN buffer layer. The X-ray diffraction and Atomic force microscopy results indicate that the quality of the InAlN layer is strongly affected by the three-dimensionally grown surface morphology, depending on the growth temperature. The lattice matching of InAlN to GaN with a flat surface and a smooth interface are obtained at temperatures of 790--800 °C. The Schottky diode fabricated on InAlN grown at 800 °C shows high-quality characteristics with the leakage current as low as 2.3 \times 10^{-9} A at -5 V, corresponding to a current density of 1.2 \times 10^{-6} A/cm2 and 6.2 \times 10^{-8} A at -10 V.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2012-01-25

著者

• 酒井 佑輔

  名古屋工業大学極微デバイス機能システム研究センター

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Sakai Yusuke

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Sakai Yusuke

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Ichikawa Junki

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Chen Zhitao

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Fujita Kazuhisa

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Egawa Takashi

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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