Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates
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概要
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The authors demonstrate AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) on high-quality AlN/sapphire template (AlN template) by evaluating its characteristics. LED structures can be grown directly on 2-in.-diameter AlN template by metal–organic chemical vapor deposition. AlGaN epilayers are confirmed to have high crystal quality on AlN template through X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). The fabricated LEDs exhibit a sharp single peak emission at DUV region around 260–270 nm from electroluminescence spectra measured at room temperature. The light intensity and current–voltage characteristics are improved by using higher quality AlN template as underlying substrate. This could facilitate the production of high-performance DUV-LEDs.
- 2010-02-25
著者
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Sumiya Shigeaki
Ngk Insulators Ltd.
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酒井 佑輔
名古屋工業大学極微デバイス機能システム研究センター
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Zhu Youhua
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Shigeaki Sumiya
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Yusuke Sakai
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Sakai Yusuke
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Mitsuhiro Tanaka
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Youhua Zhu
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Makoto Miyoshi
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Takashi Egawa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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