Zhang Baijun | Research Center For Micro-structure Devices Nagoya Institute Of Technology
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概要
- Zhang Baijunの詳細を見る
- 同名の論文著者
- Research Center For Micro-structure Devices Nagoya Institute Of Technologyの論文著者
関連著者
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Liu Yang
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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LIU Yang
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Liu Yang
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Egawa T
Research Center For Nano-device And System Nagoya Institute Of Technology
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HAO Maosheng
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Liu Y
Division Of Cancer Immunology Department Of Pathology Ohio State University Medical Center
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Ogawa Takashi
Departments Of Cardiology Tokyo Medical University
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Ogawa T
Faculty Of Engineering Takushoku University
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Ogawa Tohru
Technology Strategy Development Sony Co. Core Technology & Network Company
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Hao Maosheng
Research Center For Nano-device And System Nagoya Institute Of Technology
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WANG Gang
Department of Dermatology of Xijing Hospital, Fourth Military Medical University
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Wang Gang
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Wang Gang
Beijing Astronomical Observatory Chinese Academy Of Sciences
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Wang Gang
Changchun Institute Of Optics Fine Mechanics And Physics Chinese Academy Of Sciences.
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Wang Gang
Faculty Of Agriculture Shizuoka University
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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Ogawa Tetsuya
Institute For Chemical Research Kyoto University
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Jiang Hao
Research Center For Nano-device And System Nagoya Institute Of Technology
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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MURASE Kosuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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HORI Kengo
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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ZHAO Guangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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EGAWA Takasi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Hori Kengo
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Murase Kosuke
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga Takashi
Central Research Laboratory Hitachi Limited
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno M
Nagoya Inst. Technology
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Wang Gang
Department Of Bioengineering Faculty Of Engineering Kagoshima University
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Ogawa Takashi
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Zhang Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Ishikawa Hiroyasu
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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Zhang Baijun
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Ogawa Takashi
Department of Chemistry, College of General Education, The University of Tokyo
著作論文
- Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Valence-Band Discontinuity at the AIN/Si Interface
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer