Freedsman Joseph | Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan

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概要

関連著者

Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan
Freedsman Joseph
Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan

著作論文

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors

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