Taketomi Hiroyuki | Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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概要
- Taketomi Hiroyukiの詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie Universityの論文著者
関連著者
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Taketomi Hiroyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Taketomi Hiroyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Sugawara Katsuya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kubo Toshiharu
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kubo Toshiharu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sugawara Katsuya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University:Japan Science and Technology Agency (JST)-CREST
著作論文
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O