Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures

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概要

• 論文の詳細を見る

• Photocapacitance transient behavior of the dominant Si electron trap with an activation energy of 0.64eV in low-temperature GaAs (LT-GaAs) grown by molecular beam epitaxy (MBE), which we recently detected by deep-level transient spectroscopy, was investigated in detail. It was found that the Si trap has metastable properties causing a marked photoquenching behavior. Transition processes between the ground state and the metastable state were found to be very different from those of EL2, indicating that the dominant S1 trap is not EL2, but a new deep level peculiar to the LT-GaAs layer.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Hasegawa Hideki

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan

• Shiobara Shunsuke

  Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University

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• FOREWORD
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

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