Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
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概要
- 論文の詳細を見る
We performed a feasibility study on the solid-phase diffusion of carbon into GaN using a SiNx/CNx/GaN structure prepared by electron-cyclotron-resonance-assisted chemical vapor deposition. An X-ray photoelectron spectroscopy study on the CNx layer deposited on GaN showed that its energy positions and spectrum features are very close to those of a C-N bond, and the N composition was estimated to be 24 %, indicating a highly C-rich layer. No degradation in the chemical properties of the GaN surface was found after the diffusion process at 1000 ℃. A secondary ion mass spectrometry result clearly showed a diffusion of carbon into GaN. We also observed an increase in resistivity for the C-diffused GaN layer.
- Japan Society of Applied Physicsの論文
- 2007-03-25
著者
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Nomura Takehiko
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North-13 West-8, Kita-ku, Sapporo 060-8628, Japan
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- FOREWORD
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