Yoshida Seikoh | Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.

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概要

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著作論文

Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
High Power AIGaN/GaN HFET
Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer

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