YOSHIDA Seikoh | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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概要
関連著者
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Wada Takahiro
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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IKEDA Nariaki
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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LI Jiang
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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TAKEHARA Hironari
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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Ikeda Nariaki
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Takehara Hironari
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Li Jiang
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Yoshida Seikoh
Furukawa Electric Co. Ltd. Yokohama Jpn
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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KIMURA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Onabe Kentaro
Department Of Applied Physics The University Of Tokyo
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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YAGUCHI Hiroyuki
Department of Applied Physics, The University of Tokyo
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Wu J
Key Lab. Of Marine Bio-resources Sustainable Utilization South China Sea Inst. Of Oceanology Chinese
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Wu Jun
Department Of Applied Physics The University Of Tokyo
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Wu Jun
Guangdong Key Lab. Of Marine Materia Medica South China Sea Inst. Of Oceanology Chinese Acad. Of Sci
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KIMURA Tokuharu
Department of Applied Physics, The University of Tokyo
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Oki K
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Wu Jun
Department Of Microbiology Kumamoto University School Of Medicine
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Shiraki Yasuhiro
School Of Fundamental Science And Technology Keio University
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Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Shiraki Y
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Yoshida Seikoh
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Yoshida Seikoh
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Delian WANG
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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Yoshida S
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Kimura Tokuharu
Department Of Applied Physics The University Of Tokyo
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Delian Wang
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Onabe K
Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Wang Delian
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
著作論文
- Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics