Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
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概要
- 論文の詳細を見る
GaN and related materials are very effective for a very low loss power switching devices. The GaN is also effective for a fast recovery or freewheeling diode, since they have a very higher switching speed, and a very low recovery charge. We propose a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure. On-voltage of the diode was below O.1 V. By the pinch-off effect using a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V.
- 社団法人電子情報通信学会の論文
- 2004-06-24
著者
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Wada Takahiro
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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IKEDA Nariaki
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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LI Jiang
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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TAKEHARA Hironari
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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Ikeda Nariaki
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Takehara Hironari
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Li Jiang
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Furukawa Electric Co. Ltd. Yokohama Jpn
関連論文
- Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
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