Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
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概要
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We investigated normally off operation GaN metal–oxide–semiconductor field effect transistors (MOSFETs). The drain current of GaN MOSFETs with a gate width of 1 mm increased from 0.004 to 0.1 A by which the channel length decreased from 100 to 2 μm. However, the on-resistance was increased by shortening a channel length. In addition, the drain current of GaN MOSFETs with the channel length of 4 μm was increased from 0.08 A to more than 2.2 A, by which the channel width was increased from 1 to 16 mm. As a result, we achieved normally off operation GaN MOSFETs with the highest operation temperature of 250 °C. The drain current was 2.2 A at $V_{\text{g}}=+14$ V. The threshold voltage ($V_{\text{th}}$) was +3 V.
- 2008-09-25
著者
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Nomura Takehiko
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Chow Tat-sing
The Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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