Kambayashi Hiroshi | Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
スポンサーリンク
概要
- Kambayashi Hiroshiの詳細を見る
- 同名の論文著者
- Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japanの論文著者
関連著者
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Li Jiang
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Nomura Takehiko
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Chow Tat-sing
The Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
著作論文
- Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
- Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors