Nomura Takehiko | Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
スポンサーリンク
概要
関連著者
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Ootomo Shinya
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Nomura Takehiko
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Kambayashi Hiroshi
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Niiyama Yuki
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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KIMURA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Li Jiang
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Yoshida Seikoh
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Kimura Takeshi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Nomura Takehiko
Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Nomura Takehiko
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
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Chow Tat-sing
The Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North-13 West-8, Kita-ku, Sapporo 060-8628, Japan
著作論文
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
- Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure