Sawano Kentarou | Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

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著作論文

Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
Formation of Tensilely Strained Germanium-on-Insulator
Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates

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