Satoh Motoki | Center for Crystal Science and Technology, University of Yamanashi, Kofu 400-8511, Japan
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概要
- Satoh Motokiの詳細を見る
- 同名の論文著者
- Center for Crystal Science and Technology, University of Yamanashi, Kofu 400-8511, Japanの論文著者
関連著者
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Arimoto Keisuke
Center For Crystal Science And Technology University Of Yamanashi
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Satoh Motoki
Center for Crystal Science and Technology, University of Yamanashi, Kofu 400-8511, Japan
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
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Usami Noritaka
Institute For Material Research Tohoku University
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Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
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Sawano Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, Setagaya, Tokyo 158-0082, Japan
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Koh Shinji
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan
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Usami Noritaka
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Shiraki Yasuhiro
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, Setagaya, Tokyo 158-0082, Japan
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Yamanaka Junji
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi, Kofu 400-8511, Japan
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Nakajima Kazuo
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
著作論文
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation