NAKAGAWA Kiyokazu | Center for Crystal Science and Technology, University of Yamanashi

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概要

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著作論文

Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
Microstructure of Visible Light Emitting Porous Silicon
Fine Structure of Porous Si with Visible Photoluminescence
Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
1/f Fluctuations in LiCl Solution
Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
Effect of Molecular Structure of Chiral Fluorinated Compounds on Spontaneous Polarization of Ferroelectric Liquid Crystals
Tilt Angle Behavior of Smectic C Phase in Binary Systems
Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication

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