Hirose Yoshihisa | Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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概要
- 同名の論文著者
- Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technolの論文著者
関連著者
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NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Hoshi Yusuke
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Nakagawa Kenichi
Liquid Ctystal Laboratories Sharp Corporation
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Hirose Yoshihisa
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Shiraki Y
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Nakagawa K
Center For Crystal Science And Technology University Of Yamanashi
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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Usami Noritaka
Tohoku Univ. Miyagi Jpn
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Usami Noritaka
Institute For Material Research Tohoku University
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Ozawa Yusuke
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Yamada Atsunori
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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SAWANO Kentarou
Department of Applied Physics, The University of Tokyo
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HIROSE Yoshihisa
Musashi Institute of Technology
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OZAWA Yusuke
Musashi Institute of Technology
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KOH Shinji
Department of Applied Physics, The University of Tokyo
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YAMANAKA Junji
Center for Crystal Science and Technology, University of Yamanashi
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HATTORI Takeo
Musashi Institute of Technology
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SHIRAKI Yasuhiro
Department of Applied Physics, The University of Tokyo
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SAWANO Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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SAWANO Kentarou
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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HOSHI Yusuke
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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YAMADA Atsunori
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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HIRAOKA Yoshiyasu
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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ARIMOTO Keisuke
Center for Crystal Science and Technology, University of Yamanashi
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SHIRAKI Yasuhiro
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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HOSHI Yusuke
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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HIRAOKA Yoshiyasu
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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SATOH Yuu
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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OGAWA Yuta
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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YAMADA Atsunori
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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Koh S
Institute For Solid State Physics University Of Tokyo
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Satoh Yuu
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Koh S
The University Of Tokyo
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Koh Shinji
Department Of Applied Physics The University Of Tokyo
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Yamanaka J
Center For Crystal Science And Technology University Of Yamanashi
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Shiraki Yasuhiro
Department Of Applied Physics And Physico-informatics Keio University
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Arimoto Keisuke
Center For Crystal Science And Technology University Of Yamanashi
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Yamanaka Junji
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
著作論文
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels