USAMI Noritaka | Institute for Materials Research, Tokoku University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al_2O_3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
Structural and Optical Properties of ZnO Epitaxial Films Grown on Al_2O_3 (1120) Substrates by Metalorganic Chemical Vapor Deposition
High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
High-Temperature Solution Growth and Characterization of Chromium Disilicide
Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications

もっと見る

スポンサーリンク