Suzuno Mitsushi | Institute Of Applied Physics University Of Tsukuba
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概要
関連著者
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Suzuno Mitsushi
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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SUZUNO Mitsushi
Institute of Applied Physics, University of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Koizumi Tomoaki
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Murase Shigemitsu
Institute Of Applied Physics University Of Tsukuba
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Koizumi Tomoaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sadakuni-Makabe Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Harada Kazunori
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suzuno Mitsushi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kawakami Hideki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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Usami Noritaka
Institute Of Materials Research Tohoku University
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Chen Jun
National Agricultural Res. Center For Hokkaido Region Sapporo Jpn
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Akinaga Hiro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Usami Noritaka
Institute For Material Research Tohoku University
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SEKIGUCHI Takashi
National Insitute for Materials Science
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SAITO Takanobu
Institute of Applied Physics, University of Tsukuba
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MATSUMOTO Yuta
Institute of Applied Physics, University of Tsukuba
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SASAKI Ryo
Institute of Applied Physics, University of Tsukuba
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TAKEISHI Michitoshi
Institute of Applied Physics, University of Tsukuba
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Saito Takanobu
Institute For Materials Research
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Matsumoto Yuta
Institute Of Applied Physics University Of Tsukuba
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Sasaki Ryo
Institute Of Applied Physics University Of Tsukuba
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Saito Takanobu
Institute Of Applied Physics University Of Tsukuba
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Takeishi Mitsutomo
Institute Of Applied Physics University Of Tsukuba
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Kazunori Harada
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hiro Akinaga
Nanodevice Innovation Research Center and Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kenji Sadakuni-Makabe
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sekiguchi Takashi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Mitsushi Suzuno
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Mitsushi Suzuno
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Akutsu Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Jiptner Karolin
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Hideki Kawakami
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Chen Jun
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Tomoaki Koizumi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Hiro Akinaga
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
- Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy
- Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
- Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes