Hiro Akinaga | Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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概要
- Hiro Akinaga の詳細を見る
- 同名の論文著者
- Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
関連著者
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Hiro Akinaga
Nanodevice Innovation Research Center and Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Hiro Akinaga
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Suzuno Mitsushi
Institute Of Applied Physics University Of Tsukuba
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Kazunori Harada
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sadakuni-Makabe Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Harada Kazunori
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kenji Sadakuni-Makabe
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Mitsushi Suzuno
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ni Zhong
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hisashi Shima
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Transient Current Study on Pt/TiO2-x/Pt Capacitor
- Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy