Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy

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概要

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• CaF2 (3 nm)/Fe3Si (5 nm)/CaF2 (3 nm) ferromagnetic resonant tunneling diodes (RTDs) approximately 200 nm in diameter were grown on an n+-Si(111) substrate through SiO2 hole arrays by selected-area molecular beam epitaxy (MBE). Selected-area MBE improved the yield of negative differential resistance (NDR) observed in the current–voltage ($J$–$V$) characteristics. Approximately 40% of the RTDs showed clear NDR in the room temperature $J$–$V$ characteristics, where the forward bias was applied to the Fe3Si upper layers with respect to the n+-Si substrate.

• 2010-06-25

著者

• Suzuno Mitsushi

  Institute Of Applied Physics University Of Tsukuba

• Kazunori Harada

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Sadakuni-Makabe Kenji

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Harada Kazunori

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hiro Akinaga

  Nanodevice Innovation Research Center and Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Kenji Sadakuni-Makabe

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Mitsushi Suzuno

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Hiro Akinaga

  Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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• Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
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