Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy

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概要

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• We have grown n+-BaSi2/p+-Si tunnel junctions with different BaSi2 template layer thicknesses by molecular beam epitaxy. Even when the template layer was 1 nm in thickness, which was not actually a continuous film but small islands, they act as seed crystals for the initiation of overlayer growth. The electrical resistance of the junctions increased with template thickness. Both epitaxial growth and low resistance were achieved for thin island-like BaSi2 templates.

• 2010-06-25

著者

• Michitoshi Takeishi

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Takanobu Saito

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Yuta Matsumoto

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Ryo Sasaki

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Ryo Sasaki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yuta Matsumoto

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Michitoshi Takeishi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

関連論文

• Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy
• Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
• Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy
• Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide

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