Michitoshi Takeishi | Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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概要
- Michitoshi Takeishi の詳細を見る
- 同名の論文著者
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japanの論文著者
関連著者
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Michitoshi Takeishi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Takanobu Saito
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ryo Sasaki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Tsukada Dai
Institute Of Applied Physics University Of Tsukuba
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Matsumoto Yuta
Institute Of Applied Physics University Of Tsukuba
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Sasaki Ryo
Institute Of Applied Physics University Of Tsukuba
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Noritaka Usami
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
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Noritaka Usami
Institute of Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
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Masato Sasase
The Wakasa Wan Energy Research Center, Tsuruga, Fukui 914-0192, Japan
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Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Yuta Matsumoto
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Ryo Sasaki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yuta Matsumoto
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Michitoshi Takeishi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy
- Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells