Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells

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概要

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• We have grown BaSi2 epitaxial films and polycrystalline films by molecular-beam epitaxy on Si(111) and on (111)-oriented 100-nm-thick polycrystalline Si layers fabricated by an aluminum-induced crystallization method on SiO2, respectively. Electron backscatter diffraction analysis was performed on the 200-nm-thick BaSi2 epitaxial film and the grain size of the film was found to be approximately 3–10 μm. Photocurrents were clearly observed for the BaSi2 (900 nm)/Si and BaSi2 (300 nm)/SiO2 samples for photons with energies greater than 1.25 eV at room temperature when bias voltage was applied between the 1.5-mm-spacing striped electrodes formed on the surface. The photoresponsivity of the samples increased sharply with increasing photon energy and attained its maximum at approximately 1.60 eV. From the temperature dependence of the photoresponsivity, the activation energies of the BaSi2 epitaxial films and polycrystalline films were estimated to be approximately 6 and 52 meV, respectively.

• 2010-04-25

著者

• Tsukada Dai

  Institute Of Applied Physics University Of Tsukuba

• Matsumoto Yuta

  Institute Of Applied Physics University Of Tsukuba

• Sasaki Ryo

  Institute Of Applied Physics University Of Tsukuba

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Noritaka Usami

  Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan

• Noritaka Usami

  Institute of Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan

• Michitoshi Takeishi

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Takanobu Saito

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Masato Sasase

  The Wakasa Wan Energy Research Center, Tsuruga, Fukui 914-0192, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Ryo Sasaki

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

関連論文

• Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
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• Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
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